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| D1201UK prelim.12/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk p d power dissipation bv dss drain ? source breakdown voltage bv gss gate ? source breakdown voltage i d(sat) drain current t stg storage temperature t j maximum operating junction temperature 50w 40v 20v 10a ?65 to 150c 200c mechanical data g k m j i e d (2 pls) c n (typ) a b f (2 pls) h 1 2 3 gold metallised multi-purpose silicon dmos rf fet 10w ? 12.5v ? 500mhz single ended features simplified amplifier design suitable for broad band applications lowc rss useful p o at 1ghz low noise highgain?10dbminimum dp pin 1 source pin 2 drain pin 3 gate absolute maximum ratings (t case = 25c unless otherwise stated) applications hf/vhf/uhf communications from 1 mhz to 1 ghz metal gate rf silicon fet tetrafet dim mm tol. inches tol. a 16.51 0.25 0.650 0.010 b 6.35 0.13 0.250 0.005 c 45 5 45 5 d 3.30 0.13 0.130 0.005 e 18.92 0.08 0.745 0.003 f 1.52 0.13 0.060 0.005 g 2.16 0.13 0.085 0.005 h 14.22 0.08 0.560 0.003 i 1.52 0.13 0.060 0.005 j 6.35 0.13 0.250 0.005 k 0.13 0.03 0.005 0.001 m 5.08 0.51 0.200 0.020 n 1.27 x 45 0.13 0.050 x 45 0.005
D1201UK prelim.12/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit v gs =0 i d = 100ma v ds = 12.5v v gs =0 v gs = 20v v ds =0 i d = 10ma v ds =v gs v ds = 10v i d =1a p o = 10w v ds = 12.5v i dq = 0.2a f = 500mhz v ds =0 v gs = ?5v f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ma a v s db % ? pf pf pf electrical characteristics (t case = 25c unless otherwise stated) drain?source bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance 40 1 1 0.5 7 0.8 10 50 20:1 60 40 4 hazardous material warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thj?case thermal resistance junction ? case max. 3.5c / w thermal data * pulse test: pulse duration = 300 s , duty cycle 2% |
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